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Silicon Carbide Overview

Silicon Carbide Overview

Silicon carbide (Sic) is a group IV-V compound semiconductor material composed of carbon and silicon, a hard compound containing silicon and carbon.

As a semiconductor, it is extremely rare in nature and occurs in the form of the mineral “Moissanite”, which is found only in small amounts in certain types of meteorites, corundum deposits and kimberlites. Almost all silicon carbide sold in the world is found in Synthetic Of course, this also includes Moissanite jewelry.

Although rare on Earth, it is very common in space, a common form of stardust found around carbon-rich stars, the particles of which have been found in primitive(unchanged) meteorites .

Development process

Physical and chemical properties

The main form that exists in semiconductors

The main form in semiconductors is as a substrate material;

Based on its excellent characteristics, the limit performance of silicon carbide substrate is better than that of silicon substrate;

Can meet the application requirements under high temperature, high pressure, high frequency, high power and other conditions;

It is one of the ideal materials for making high temperature, high frequency, high power and high voltage devices…

Substrate process flow


Analysis of Five Difficulties Substrate

From the chart above

European, American and Japanese companies are leading, and the United States is the world’s largest

70%~80% of global SiC production comes from American companies