Silicon Carbide Overview
Silicon carbide (Sic) is a group IV-V compound semiconductor material composed of carbon and silicon, a hard compound containing silicon and carbon.
As a semiconductor, it is extremely rare in nature and occurs in the form of the mineral “Moissanite”, which is found only in small amounts in certain types of meteorites, corundum deposits and kimberlites. Almost all silicon carbide sold in the world is found in Synthetic Of course, this also includes Moissanite jewelry.
Although rare on Earth, it is very common in space, a common form of stardust found around carbon-rich stars, the particles of which have been found in primitive(unchanged) meteorites .
Development process
Physical and chemical properties
The main form that exists in semiconductors
The main form in semiconductors is as a substrate material;
Based on its excellent characteristics, the limit performance of silicon carbide substrate is better than that of silicon substrate;
Can meet the application requirements under high temperature, high pressure, high frequency, high power and other conditions;
It is one of the ideal materials for making high temperature, high frequency, high power and high voltage devices…
Substrate process flow
Analysis of Five Difficulties Substrate
From the chart above
European, American and Japanese companies are leading, and the United States is the world’s largest
70%~80% of global SiC production comes from American companies
