Silicon Carbide Overview
Silicon carbide (sento) dia fitaovana semiconductor fitambarana IV-V ahitana karbaona sy silisiôma, fitambarana mafy misy silisiôma sy karbaona.
Toy ny semiconductor, tena tsy fahita firy izy io ary miseho amin'ny endriky ny mineraly “Moissanite”, izay tsy hita afa-tsy amin'ny ampahany kely amin'ny karazana meteorita sasany, fametrahana corundum sy kimberlites. Almost all silicon carbide sold in the world is found in Synthetic Of course, this also includes Moissanite jewelry.
Although rare on Earth, it is very common in space, a common form of stardust found around carbon-rich stars, the particles of which have been found in primitive(unchanged) meteorites .
Development process
Physical and chemical properties
The main form that exists in semiconductors
The main form in semiconductors is as a substrate material;
Based on its excellent characteristics, the limit performance of silicon carbide substrate is better than that of silicon substrate;
Can meet the application requirements under high temperature, high pressure, avo matetika, high power and other conditions;
It is one of the ideal materials for making high temperature, avo matetika, high power and high voltage devices…
Substrate process flow
Analysis of Five Difficulties Substrate
From the chart above
European, American and Japanese companies are leading, and the United States is the world’s largest
70%~80% of global SiC production comes from American companies
