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Creze kwatz: yon veso endispansab pou fotovoltaik, semi-conducteurs ak lòt endistri yo

Creze kwatz: yon veso endispansab pou fotovoltaik, semi-conducteurs ak lòt endistri yo

1. Understanding the Quartz Crucible

Quartz crucibles have the advantages of high purity, fò rezistans tanperati, gwo gwosè, segondè presizyon, ak bon prezèvasyon chalè. Espesyalman nan pwosesis la nan kwasans kristal Silisyòm, kwatz la te vin tounen yon eleman kle iranplasabl!

Kreze kwatz yo ka itilize anba a 1450 ° C epi yo divize an de kalite: transparan ak opak. Premye kreze kwatz yo te tout transparan. This transparent structure easily led to uneven heat transfer conditions and increased the difficulty of ingot growth, so this kind of crucible was eliminated.

Kounye a, translucent quartz crucible is an indispensable basic material for pulling large-diameter single crystal silicon and developing large-scale integrated circuits. Jodi a, the developed countries of the world’s semiconductor industry have replaced the small transparent quartz crucible with this crucible. The translucent quartz crucible has the advantages of high purity, fò rezistans tanperati, large size and high precision, good heat preservation, energy saving and stable quality.

2. The production process of quartz crucible

According to different preparation processes and uses, kwatz kwatz yo divize an kwatz kwatz ak kwatz kreze seramik. Creze kwatz arc se sitou itilize pou Silisyòm monokristalin Czochralski, ki fabrike pa metòd la arc (sa vle di, yo itilize nan jaden semi-conducteurs);

Kwatz seramik kreze yo pwensipalman itilize pou lengote Silisyòm polikristalin, lè l sèvi avèk metòd jeneral preparasyon seramik tankou grouting oswa bòdi piki.

Gwo-dyamèt sèl kristal Silisyòm (pi wo a 200mm) se fondamantalman pwodwi pa Czochralski la (CZ) metòd. Li pran plis tan ak plis resous pou grandi tankou yon kristal Silisyòm gwo gwosè.Se poutèt sa, li trè enpòtan pou amelyore pousantaj siksè nan kwasans kristal Silisyòm pou chak founo.

Pandan kwasans lan nan kristal Silisyòm Czochralski, debwatman-gratis kwasans sèl kristal ka echwe akòz divès rezon, resulting in a great loss of resources and time.

There are many reasons for the failure of dislocation-free single crystal growth. Under the current conditions of stable and mature Czochralski silicon single crystal furnace and its thermal field design, the purity of the quartz crucible in direct contact with the silicon melt and the release of tiny cristobalite particles during growth are generally considered to be one of the main reasons for the failure of the growth of large-diameter dislocation-free Czochralski crystals.

In other words, the quality of the arc quartz crucible is the main factor affecting the quality of Czochralski monocrystalline silicon. Se poutèt sa, amelyorasyon kontinyèl nan kondisyon yo bon jan kalite pou gwo-dyamèt sèl kristal Silisyòm te mete devan pi wo kondisyon pou pwodwi kwatz ak materyèl ki gen rapò ak materyèl semi-conducteurs..

Tankou enspeksyon sab kwatz, pirifikasyon sab kwatz, premye enspeksyon fonn arc, netwayaj miray deyò, koupe wotè, chamfering, netwayaj, kouch, siye, final enspeksyon, anbalaj, anbake, elatriye.

De pwosesis pwodiksyon kwatz seramik yo se apeprè menm bagay la. Sepandan, akòz diferans ki genyen nan metòd pwodiksyon an, seleksyon an nan ekipman sipò pou de pwosesis yo toujou diferan.

(1) Pwosesis pwodiksyon grouting

Pwosesis pwodiksyon jeneral metòd grouting la: grouting – demoulding – vire – geri – premye enspeksyon – repare – siye – kalsine – taye – final enspeksyon – anbalaj

Depi tan an demoulding nan bòdi piki se jeneralman 8 èdtan, efikasite bòdi a relativman ba, and the output should not be too large.

(2) Production process of injection coagulation method

General production process of injection coagulation method: grouting – demoulding – vire – premye enspeksyon – repare – siye – kalsine – taye – final enspeksyon – anbalaj
Because the grouting method relies on the water absorption of the plaster mold to dry, the demoulding time is long and the production efficiency is low.

The injection molding method uses a steel mold, but there are additives in the product ingredients. The green body can be quickly solidified and formed during the production process, improving the strength and easy to quickly demould. And the strength of the green body after demoulding is high, and it does not need to be cured by a curing furnace.

Li ka wè nan analiz ki anwo a konparatif ke de pwosesis pwodiksyon yo se sèlman metòd koagulasyon piki a epi yo pa mande pou yon gwo founo geri pou geri kò vèt la., ak koule nan pwosesis se fondamantalman menm bagay la.

3. Sèvi ak ak antretyen nan kwatz crucible

Konpozisyon chimik prensipal kwatz kwatz la se diyoksid Silisyòm, ki pa kominike ak lòt asid eksepte asid fluoridrik, epi li fasil pou kominike avèk alkali mordan ak kabonat metal alkali;

Creze kwatz la gen bon estabilite tèmik epi yo ka chofe dirèkteman sou flanm dife a;

Kreze kwatz yo fasil kase, kidonk fè atansyon lè w ap itilize yo;

Quartz crucible ka sèvi ak silfat idwojèn potasyòm (sodyòm), tiosulfat sodyòm (siye nan 212 ℃) kòm flux, ak tanperati a k ​​ap fonn pa ta dwe depase 800 ℃.

4. Demann analiz de quartz creuset

In terms of service life, the ideal life of the quartz crucible is 400 hours+, and the worst case is about 300 èdtan. (Note: The service life of the quartz crucible corresponding to the N-type silicon wafer is 50-100 hours lower than that of the P-type silicon wafer, sa vle di, the life of the quartz crucible for the P-type silicon wafer is about 400 èdtan, and the life of the quartz crucible for the N-type silicon wafer is 300-350 èdtan).

Quartz crucible consumption of a single crystal furnace: Kounye a, a single crystal furnace of P-type silicon wafer uses an average of 2 quartz crucibles a month (720 èdtan) ak 24 quartz crucibles a year. Quartz crucible consumption of 1GW silicon wafer: 1GW182 silicon wafer production capacity corresponds to 100 single crystal furnaces, and 1GW silicon wafer shipment corresponds to about 2400 quartz crucibles.

5. Rezime

Quartz crucibles are mainly used in semiconductor, fotovoltaik ak lòt jaden. Akòz wo degre de presizyon pwodwi ak devlopman rapid teknolojik nan endistri fotovoltaik la, kondisyon yo pou pite a ak presizyon nan kwatz krize yo ap vin de pli zan pli strik.